The electron beam lithography (E-Beam) is a sophisticated nanofabrication tool based on highly focussed electron beam for top down and very high resolution direct write patterning of micron to nano size features on electron beam sensitive resists. The system can be used to fabricate device components in semiconductor or insulator materials and generate high quality optical mask for photolithography. The electron beam lithography system can regularly achieve patterning of sub-micron features and its maskless lithography approach see a fast fabrication turnaround for multi design modifications and intricate alignment processes. This system is an ideal fabrication tool for basic to advanced nanoscale research activity.
The JBX-9300FS electron beam lithography is the "flagship" tool of the Centre and is a highly flexible nanofabrication machine which is capable of producing very small (sub 100 nm) structures in a wide range of materials. This system features a stable and very small e-beam spot size of 4 nm from a zirconium oxide - tungsten thermal field emission tip source. The system operates at high acceleration voltage of 100 kV and capable of patterning an area of 1 mm x 1 mm writing field in high resolution mode. When writing a large pattern, it can achieve a low stitching error of less than 20 nm in the X and Y direction and high positional accuracy of 1 nm. It has a wide operational beam current and high beam stability at fast beam scan rates of 50 MHz - thus improving lithography time without compromising writing resolution. It also features an advanced pattern conversion and proximity correction software for complicated patterns. Together with its automatic marker recognition, the JBX-9300FS can achieve high overlay accuracy when aligning two patterns. It is also capable of automated processing of large samples like wafer up to 300 mm diameter and 180 mm optical mask plate.
The JBX-9300FS can regularly expose features down to 20 nm line width and has also been demonstrated by our machine to produce features smaller than 15 nm (process dependent). The standard e-beam resists include PMMA, ZEP series, UVIII and HSQ.